PSMN035-100LS NXP Semiconductors, PSMN035-100LS Datasheet - Page 9

• Manufacturer Part Number: PSMN035-100LS
• Description: MOSFET,N CH,100V,27A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-100LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 29mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN035-100LS
Product data sheet
Fig 15. Gate-source voltage as a function of gate
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
V
(V)
GS
10
8
6
4
2
0
charge; typical values
0
V
DS
10
= 20 V
20
(A)
I
S
30
20
10
80 V
50 V
0
Q
0
All information provided in this document is subject to legal disclaimers.
003a a e 361
G
(nC)
30
Rev. 2 — 18 August 2010
T
0.3
j
= 150 °C
N-channel QFN3333 100 V 32mΩ standard level MOSFET
0.6
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
0.9
4
3
2
10
as a function of drain-source voltage; typical
values
T
−1
003a a e 363
j
V
= 25 °C
SD
(V)
1.2
PSMN035-100LS
1
10
V
© NXP B.V. 2010. All rights reserved.
003a a e 362
DS
(V)
C
C
C
oss
rss
iss
10
2
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