PSMN035-100LS NXP Semiconductors, PSMN035-100LS Datasheet - Page 7

• Manufacturer Part Number: PSMN035-100LS
• Description: MOSFET,N CH,100V,27A,QFN3333
• Manufacturer: NXP Semiconductors

Specifications of PSMN035-100LS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 29mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: QFN
• Rohs Compliant: Yes

NXP Semiconductors
PSMN035-100LS
Product data sheet
Fig 7.
Fig 9.
(pF)
C
(A)
I
D
2000
1500
1000
500
30
20
10
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
0
0
0.5
2
10
1
4
6
V
5
GS
1.5
6
C
(V) = 4.5
C
All information provided in this document is subject to legal disclaimers.
003a a e 359
003a a e 355
rss
V
V
iss
GS
DS
4.7
(V)
(V)
Rev. 2 — 18 August 2010
8
2
N-channel QFN3333 100 V 32mΩ standard level MOSFET
Fig 8.
Fig 10. Gate-source threshold voltage as a function of
R
(mΩ)
V
DSon
GS(th)
(V)
100
80
60
40
20
5
4
3
2
1
0
0
-60
of gate-source voltage; typical values
junction temperature
Drain-source on-state resistance as a function
0
0
5
PSMN035-100LS
max
min
typ
10
60
120
15
© NXP B.V. 2010. All rights reserved.
003a a e 360
V
T
003aae486
GS
j
(°C)
(V)
180
20
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