PSMN030-60YS NXP Semiconductors, PSMN030-60YS Datasheet - Page 5

• Manufacturer Part Number: PSMN030-60YS
• Description: MOSFET,N CH,60V,29A,LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN030-60YS

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 19.1mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: SOT-669
• Rohs Compliant: Yes

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN030-60YS
Product data sheet
Symbol
R
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
-1
-2
1
10
values
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
-6
δ = 0.5
0.05
0.1
Thermal characteristics
0.2
0.02
single shot
Parameter
thermal resistance from junction to
mounting base
10
-5
All information provided in this document is subject to legal disclaimers.
10
-4
Rev. 02 — 25 October 2010
Conditions
see
N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET
Figure 4
10
-3
10
-2
PSMN030-60YS
Min
-
10
P
-1
t
Typ
-
p
T
t
p
© NXP B.V. 2010. All rights reserved.
003aae117
(s)
δ =
Max
2.7
T
t
p
t
1
Unit
K/W
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