PH8230E NXP Semiconductors, PH8230E Datasheet - Page 4

• Manufacturer Part Number: PH8230E
• Description: MOSFET, N, 30V, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PH8230E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 67A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.6ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 12946
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
Z th(j-mb)
(K/W)
10 -1
10
1
10 -4
thermal resistance from junction to mounting base
Thermal characteristics
= 0.5
0.02
0.05
0.2
0.1
single pulse
5.1 Transient thermal impedance
10 -3
Rev. 03 — 02 March 2004
10 -2
Conditions
Figure 4
N-channelTrenchMOS™ enhanced logic level FET
10 -1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
P
t p
Min Typ Max Unit
-
T
PH8230E
t p (s)
003aaa370
-
=
t p
T
t
1
2
4 of 12
K/W