PH8230E NXP Semiconductors, PH8230E Datasheet - Page 4
![MOSFET, N, 30V, LFPAK](/photos/22/17/221780/756424404-40_sml.jpg)
PH8230E
Manufacturer Part Number
PH8230E
Description
MOSFET, N, 30V, LFPAK
Manufacturer
NXP Semiconductors
Datasheet
1.PH8230E.pdf
(12 pages)
Specifications of PH8230E
Transistor Polarity
N Channel
Continuous Drain Current Id
67A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
7.6ohm
Rds(on) Test Voltage Vgs
4.5V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C
Threshold Voltage Vgs Typ
1.7V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PH8230E
Manufacturer:
NXP
Quantity:
1 685
Company:
Part Number:
PH8230EЈ¬115
Manufacturer:
NXP
Quantity:
1 500
Philips Semiconductors
5. Thermal characteristics
Table 4:
9397 750 12946
Product data
Symbol Parameter
R
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
th(j-mb)
Z th(j-mb)
(K/W)
10 -1
10
1
10 -4
thermal resistance from junction to mounting base
Thermal characteristics
= 0.5
0.02
0.05
0.2
0.1
single pulse
5.1 Transient thermal impedance
10 -3
Rev. 03 — 02 March 2004
10 -2
Conditions
Figure 4
N-channelTrenchMOS™ enhanced logic level FET
10 -1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
P
t p
Min Typ Max Unit
-
T
PH8230E
t p (s)
003aaa370
-
=
t p
T
t
1
2
4 of 12
K/W