PH8230E NXP Semiconductors, PH8230E Datasheet - Page 2

• Manufacturer Part Number: PH8230E
• Description: MOSFET, N, 30V, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PH8230E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 67A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.6ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 12946
Product data
Type number
PH8230E
Symbol Parameter
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
GS
tot
DS(AL)S
drain-source voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC) T
peak source (diode forward) current T
non-repetitive drain-source
avalanche energy
Limiting values
Ordering information
Package
Name
LFPAK
Description
Plastic single-ended surface mounted package; 4 leads
Conditions
25 C
T
T
T
T
unclamped inductive load; I
t
starting T
p
mb
mb
mb
mb
mb
mb
Rev. 03 — 02 March 2004
= 0.15 ms; V
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
T
j
j
= 25 C
150 C
Figure 1
GS
DD
GS
N-channelTrenchMOS™ enhanced logic level FET
= 10 V;
= 30 V; V
= 10 V;
p
p
10 s;
10 s
Figure 2
Figure 2
D
GS
= 33.9 A;
= 10 V;
Figure 3
and
3
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
55
55
PH8230E
Max
30
67
42
268
62.5
+150
+150
52
150
115
20
Version
SOT669
2 of 12
Unit
V
V
A
A
A
W
A
A
mJ
C
C