PH8230E NXP Semiconductors, PH8230E Datasheet - Page 3

• Manufacturer Part Number: PH8230E
• Description: MOSFET, N, 30V, LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PH8230E

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 67A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 7.6ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Philips Semiconductors
9397 750 12946
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
T
P der
P
I D
10 -1
(%)
120
10 3
10 2
mb
der
80
40
10
0
1
function of mounting base temperature.
= 25 C; I
10 -1
0
=
---------------------- -
P
tot 25 C
P
tot
DM
50
is single pulse; V
100%
100
Limit R DSon = V DS / I D
GS
= 10 V
150
T mb ( C)
1
03aa15
200
Rev. 03 — 02 March 2004
Fig 2. Normalized continuous drain current as a
N-channelTrenchMOS™ enhanced logic level FET
V
I der
(%)
I
120
GS
der
80
40
0
function of mounting base temperature.
0
=
DC
10 V
-------------------
I
D 25 C
10
I
D
50
100%
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100
1 ms
100
10 ms
100 ms
t p = 10 s
V DS (V)
s
150
PH8230E
T mb ( C)
003aaa369
03aa23
10 2
200
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