BUK654R6-55C NXP Semiconductors, BUK654R6-55C Datasheet - Page 9

• Manufacturer Part Number: BUK654R6-55C
• Description: MOSFET,N CH,55V,92A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK654R6-55C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 4.6mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK654R6-55C
Product data sheet
Fig 13. Gate-source voltage as a function of gate
Fig 15. Input, output and reverse transfer capacitances
(pF)
V
(V)
C
GS
10
10
10
10
10
5
4
3
2
8
6
4
2
0
10
charge; typical values
as a function of drain-source voltage; typical
values
T
V
0
−2
j
GS
= 25°C; I
= 0 V; f = 1 MHz
V
DS
10
D
−1
= 14 V
= 25 A
50
1
V
DS
100
= 44 V
10
Q
All information provided in this document is subject to legal disclaimers.
V
G
003aae713
003aae714
DS
(nC)
C
C
C
oss
iss
(V)
rss
10
Rev. 02 — 14 October 2010
150
2
Fig 14. Gate charge waveform definitions
Fig 16. Source (diode forward) current as a function of
(A)
I
S
160
120
N-channel TrenchMOS intermediate level FET
80
40
0
source-drain (diode forward) voltage; typical
values
V
0
V
GS
V
V
V
GS(pl)
DS
GS(th)
GS
= 0 V
Q
GS1
0.4
I
Q
T
D
j
GS
BUK654R6-55C
= 175 °C
Q
GS2
Q
G(tot)
Q
GD
0.8
© NXP B.V. 2010. All rights reserved.
V
SD
T
003aaa508
003aae716
j
= 25 °C
(V)
1.2
9 of 14