BUK654R6-55C,127 NXP Semiconductors, BUK654R6-55C,127 Datasheet

BUK654R6-55C,127

Manufacturer Part Number

BUK654R6-55C,127

Description

MOSFET N-CH TRENCH SOT78A

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Datasheet

1.BUK654R6-55C127.pdf (14 pages)

Specifications of BUK654R6-55C,127

Input Capacitance (ciss) @ Vds

7750pF @ 25V

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

5.4 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

2.8V @ 1mA

Gate Charge (qg) @ Vgs

124nC @ 10V

Power - Max

204W

Mounting Type

Through Hole

Package / Case

TO-220-3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4.6 mOhms

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Power Dissipation

204 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free by exemption / RoHS compliant by exemption

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

Table 1.

Symbol

Static characteristics

tot

DSon

BUK654R6-55C

N-channel TrenchMOS intermediate level FET

Rev. 02 — 14 October 2010

AEC Q101 compliant

Suitable for intermediate level gate

drive sources

12 V and 24 V automotive systems

Electric and electro-hydraulic power

steering

Motors, lamps and solenoid control

Quick reference data

Parameter

drain-source

voltage

drain current

total power

dissipation

drain-source

on-state resistance

Conditions

see

≥ 25 °C; T

Figure 1

Figure 11

= 25 °C; see

= 10 V; T

= 10 V; I

≤ 175 °C

= 25 A; T

= 25 °C;

Figure 2

Suitable for thermally demanding

environments due to 175 °C rating

Start-Stop micro-hybrid applications

Transmission control

Ultra high performance power

switching

= 25 °C;

[1]

Min

Product data sheet

Typ

4.6

Max Unit

100

204

5.4

mΩ

Related parts for BUK654R6-55C,127

BUK654R6-55C,127 Summary of contents

Page 1

... BUK654R6-55C N-channel TrenchMOS intermediate level FET Rev. 02 — 14 October 2010 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... V; see GS see Figure 14 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol ...

Page 3

... Figure ° ≤ 10 µs; pulsed ° 100 A; V ≤ sup °C GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C Min Max - 55 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 Figure 1 - 92.6 - 524 - 204 -55 175 ...

Page 4

... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C 0 50 100 150 T 003aae707 = 10 μ (V) DS © NXP B.V. 2010. All rights reserved. 03aa16 200 (° ...

Page 5

... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK654R6-55C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 vertical in free air −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C Min Typ Max - - 0. 003aae531 t P δ = ...

Page 6

... Ω G(ext) from source lead to source bond pad ; °C j from drain lead 6 mm from package to centre of die ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C Min Typ Max = 25 ° -55 ° 1.8 2.3 2 3.3 = 175 ° ...

Page 7

... A/µ 003aae708 (A) D Fig 6. 003aae710 R DSon (m Ω ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C N-channel TrenchMOS intermediate level FET Min Typ = 25 ° 112 200 ( (A) 160 120 0 25° 300 μs ...

Page 8

... Fig 10. Gate-source threshold voltage as a function of 003aae712 4 150 200 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C N-channel TrenchMOS intermediate level FET 4 3 max @1mA 2 typ @1mA min @2.5mA 120 junction temperature 2 ...

Page 9

... Q (nC) G Fig 14. Gate charge waveform definitions 003aae714 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C N-channel TrenchMOS intermediate level FET GS(pl) V GS(th GS1 GS2 ...

Page 10

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C N-channel TrenchMOS intermediate level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK654R6-55C v.2 20101014 • Modifications: Status changed from objective to product. • Various changes to content. BUK654R6-55C v.1 20100921 BUK654R6-55C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice ...

Page 12

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C Trademarks © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 October 2010 Document identifier: BUK654R6-55C ...

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