BUK654R6-55C NXP Semiconductors, BUK654R6-55C Datasheet
BUK654R6-55C
Specifications of BUK654R6-55C
Related parts for BUK654R6-55C
BUK654R6-55C Summary of contents
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... BUK654R6-55C N-channel TrenchMOS intermediate level FET Rev. 02 — 14 October 2010 1. Product profile 1.1 General description Intermediate level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... V; see GS see Figure 14 Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C N-channel TrenchMOS intermediate level FET Min ≤ sup = Figure 13; Graphic symbol ...
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... Figure ° ≤ 10 µs; pulsed ° 100 A; V ≤ sup °C GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C Min Max - 55 [1] -16 16 [2] -20 20 [3] Figure 1 - 100 Figure 1 - 92.6 - 524 - 204 -55 175 ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C 0 50 100 150 T 003aae707 = 10 μ (V) DS © NXP B.V. 2010. All rights reserved. 03aa16 200 (° ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK654R6-55C Product data sheet N-channel TrenchMOS intermediate level FET Conditions see Figure 4 vertical in free air −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C Min Typ Max - - 0. 003aae531 t P δ = ...
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... Ω G(ext) from source lead to source bond pad ; °C j from drain lead 6 mm from package to centre of die ; °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C Min Typ Max = 25 ° -55 ° 1.8 2.3 2 3.3 = 175 ° ...
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... A/µ 003aae708 (A) D Fig 6. 003aae710 R DSon (m Ω ° (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C N-channel TrenchMOS intermediate level FET Min Typ = 25 ° 112 200 ( (A) 160 120 0 25° 300 μs ...
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... Fig 10. Gate-source threshold voltage as a function of 003aae712 4 150 200 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C N-channel TrenchMOS intermediate level FET 4 3 max @1mA 2 typ @1mA min @2.5mA 120 junction temperature 2 ...
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... Q (nC) G Fig 14. Gate charge waveform definitions 003aae714 C iss C oss C rss (V) DS Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C N-channel TrenchMOS intermediate level FET GS(pl) V GS(th GS1 GS2 ...
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... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C N-channel TrenchMOS intermediate level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK654R6-55C v.2 20101014 • Modifications: Status changed from objective to product. • Various changes to content. BUK654R6-55C v.1 20100921 BUK654R6-55C Product data sheet N-channel TrenchMOS intermediate level FET Data sheet status Change notice ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 14 October 2010 BUK654R6-55C Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 October 2010 Document identifier: BUK654R6-55C ...