BUK652R0-30C NXP Semiconductors, BUK652R0-30C Datasheet - Page 7

• Manufacturer Part Number: BUK652R0-30C
• Description: MOSFET,N CH,30V,120A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK652R0-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
Table 6.
BUK652R0-30C
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
R
(S)
(mΩ)
g
DSon
fs
250
200
150
100
50
16
12
0
8
4
0
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
25
4
…continued
50
8
75
12
Conditions
I
see
I
V
All information provided in this document is subject to legal disclaimers.
S
S
003a a e 237
003a a e 240
GS
V
I
= 25 A; V
= 20 A; dI
D
GS
(A)
Figure 15
= -10 V; V
(V)
Rev. 01 — 6 September 2010
100
16
GS
S
/dt = -100 A/µs;
DS
= 0 V; T
= 25 V
Fig 6.
Fig 8.
j
= 25 °C;
(A)
I
D
(A)
I
D
100
N-channel TrenchMOS intermediate level FET
30
20
10
80
60
40
20
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Transfer characteristics: drain current as a
Output characteristics: drain current as a
0
0
10
T
0.25
j
4.5
= 175 °C
2
BUK652R0-30C
4
Min
-
-
-
0.5
T
j
= 25 °C
4
Typ
0.8
70
138
V
GS
0.75
© NXP B.V. 2010. All rights reserved.
V
(V) = 3.8
003a a e 236
003a a e 235
GS
V
DS
(V)
Max
1.2
-
-
3.4
3.3
(V)
3.6
3.2
1
6
Unit
V
ns
nC
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