BUK652R0-30C NXP Semiconductors, BUK652R0-30C Datasheet - Page 10

• Manufacturer Part Number: BUK652R0-30C
• Description: MOSFET,N CH,30V,120A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK652R0-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
BUK652R0-30C
Product data sheet
Fig 16. Drain-source on-state resistance as a function of drain current; typical values
R
(mΩ)
DSon
10
8
6
4
2
0
All information provided in this document is subject to legal disclaimers.
0
Rev. 01 — 6 September 2010
25
V
GS
(V) = 3.6
50
N-channel TrenchMOS intermediate level FET
3.8
75
003aae238
I
D
(A)
4.5
10
4
5
100
BUK652R0-30C
© NXP B.V. 2010. All rights reserved.
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