BUK652R0-30C NXP Semiconductors, BUK652R0-30C Datasheet - Page 10
![MOSFET,N CH,30V,120A,SOT78](/photos/41/53/415315/sot078a_3d_sml.gif)
BUK652R0-30C
Manufacturer Part Number
BUK652R0-30C
Description
MOSFET,N CH,30V,120A,SOT78
Manufacturer
NXP Semiconductors
Datasheet
1.BUK652R0-30C127.pdf
(15 pages)
Specifications of BUK652R0-30C
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
On Resistance Rds(on)
1.9mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
16V
Operating Temperature Range
-55°C To +175°C
Transistor Case
RoHS Compliant
Transistor Case Style
TO-220AB
Rohs Compliant
Yes
NXP Semiconductors
BUK652R0-30C
Product data sheet
Fig 16. Drain-source on-state resistance as a function of drain current; typical values
R
(mΩ)
DSon
10
8
6
4
2
0
All information provided in this document is subject to legal disclaimers.
0
Rev. 01 — 6 September 2010
25
V
GS
(V) = 3.6
50
N-channel TrenchMOS intermediate level FET
3.8
75
003aae238
I
D
(A)
4.5
10
4
5
100
BUK652R0-30C
© NXP B.V. 2010. All rights reserved.
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