BUK652R0-30C NXP Semiconductors, BUK652R0-30C Datasheet - Page 6

• Manufacturer Part Number: BUK652R0-30C
• Description: MOSFET,N CH,30V,120A,SOT78
• Manufacturer: NXP Semiconductors

Specifications of BUK652R0-30C

• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 1.9mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 16V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case: RoHS Compliant
• Transistor Case Style: TO-220AB
• Rohs Compliant: Yes

NXP Semiconductors
6. Characteristics
Table 6.
BUK652R0-30C
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
L
L
DSS
GSS
d(on)
r
d(off)
f
D
S
(BR)DSS
GS(th)
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
internal drain
inductance
internal source
inductance
Conditions
I
I
I
see
I
see
I
see
V
V
V
V
V
see
V
see
V
see
V
see
I
see
I
see
V
T
V
R
from drain lead 6 mm from package to
centre of die ; T
from source lead to source bond pad ;
T
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
D
j
j
DS
DS
DS
DS
GS
GS
GS
GS
GS
DS
G(ext)
= 25 °C; see
= 25 °C
= 250 µA; V
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 2.5 mA; V
= 25 A; V
= 25 A; V
Figure
Figure 10
Figure 10
Figure 16
Figure 16
Figure
Figure 16
Figure
Figure
= 30 V; V
= 30 V; V
= 0 V; V
= 0 V; V
= 25 V; R
= 10 V; I
= 4.5 V; I
= 10 V; I
= 5 V; I
= 0 V; V
Rev. 01 — 6 September 2010
= 10 Ω
9; see
11; see
12; see
12; see
D
DS
DS
DS
DS
GS
GS
DS
D
D
D
= 25 A; T
GS
GS
L
DS
GS
GS
= 25 A; T
= 25 A; T
= 24 V; V
= 24 V; V
= V
= V
= 25 A; T
Figure 14
= 1 Ω; V
= 20 V; T
= -20 V; T
= 25 V; f = 1 MHz;
j
= 25 °C
= 0 V; T
= 0 V; T
= V
= 0 V; T
= 0 V; T
Figure 10
GS
GS
Figure 16
Figure 13
Figure 13
GS
; T
; T
j
; T
= 25 °C;
GS
j
j
j
j
GS
GS
j
j
j
j
= 25 °C;
= -55 °C;
= 25 °C;
= 175 °C;
j
j
j
= 25 °C;
= 25 °C
= 175 °C
= 25 °C
j
= 25 °C
= -55 °C
= 25 °C
= 175 °C;
= 10 V;
= 5 V;
= 10 V;
N-channel TrenchMOS intermediate level FET
BUK652R0-30C
Min
30
27
1.8
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
2.3
-
-
0.02
-
2
2
1.9
2.6
3.4
2.3
131
229
38
63
11223 14964 pF
1780
1085
53
114
363
192
4.5
7.5
© NXP B.V. 2010. All rights reserved.
2136
-
Max
-
-
2.8
3.3
-
1
500
100
100
2.2
3.7
4.2
3
-
-
-
-
1486
-
-
-
-
-
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
nC
pF
pF
ns
ns
ns
ns
nH
nH
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