SI4483EDY-T1-GE3 Vishay, SI4483EDY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4483EDY-T1-GE3
• Description: P CHANNEL MOSFET, -30V, 14A, SOIC
• Manufacturer: Vishay

Specifications of SI4483EDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -14A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72862.
Document Number: 72862
S-83038-Rev. D, 22-Dec-08
0.01
0.1
2
1
10 -
0.05
0.02
4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10 -
2
10 -
1
1
Vishay Siliconix
Si4483EDY
www.vishay.com
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