SI4483EDY-T1-GE3 Vishay, SI4483EDY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4483EDY-T1-GE3
• Description: P CHANNEL MOSFET, -30V, 14A, SOIC
• Manufacturer: Vishay

Specifications of SI4483EDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -14A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72862
S-83038-Rev. D, 22-Dec-08
0.020
0.016
0.012
0.008
0.004
0.000
0.1
50
40
30
20
10
50
10
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
0.2
On-Resistance vs. Drain Current
V
10
1
V
GS
V
SD
DS
Output Characteristics
= 10 thru 4 V
- Source-to-Drain Voltage (V)
- Drain-to-Source Voltage (V)
0.4
T
I
D
J
- Drain Current (A)
= 150 °C
20
2
V
V
GS
0.6
GS
= 4.5 V
= 10 V
30
3
T
0.8
3 V
J
= 25 °C
40
4
1.0
1.2
50
5
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
- 50
0.0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
D
- 25
0.5
= 14 A
2
V
V
GS
Transfer Characteristics
T
GS
0
1.0
J
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
4
1.5
T
25 °C
C
50
Vishay Siliconix
= 125 °C
2.0
Si4483EDY
6
75
2.5
www.vishay.com
100
- 55 °C
8
3.0
125
150
3.5
10
3