SI4483EDY-T1-GE3 Vishay, SI4483EDY-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI4483EDY-T1-GE3
• Description: P CHANNEL MOSFET, -30V, 14A, SOIC
• Manufacturer: Vishay

Specifications of SI4483EDY-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -14A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 14mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
0.01
- 50
0.1
2
1
10 -
- 25
0.05
4
Duty Cycle = 0.5
0.2
0.1
0.02
0
Threshold Voltage
T
J
25
- Temperature (°C)
10 -
Single Pulse
3
50
I
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10
10 -
1
0.1
Limited by
R
2
DS(on)
125
* V
Safe Operating Area, Junction-to-Case
Single Pulse
GS
T
*
C
> minimum V
150
= 25 °C
V
Square Wave Pulse Duration (s)
DS
10 -
- Drain-to-Source Voltage (V)
1
1
GS
at which r
DS(on)
10
1
50
40
30
20
10
0
0.01
is specified
10 ms
100 ms
1 ms
1 s
10 s
DC
0.1
100
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
Single Pulse Power
P
DM
JM
-
1
T
t
A
1
Time (s)
= P
t
S-83038-Rev. D, 22-Dec-08
2
DM
Document Number: 72862
Z
thJA
10
thJA
100
t
t
1
2
(t)
= 70 °C/W
100
600
600