SI4483EDY-T1-GE3 Vishay, SI4483EDY-T1-GE3 Datasheet - Page 2

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SI4483EDY-T1-GE3

Manufacturer Part Number
SI4483EDY-T1-GE3
Description
P CHANNEL MOSFET, -30V, 14A, SOIC
Manufacturer
Vishay
Datasheet

Specifications of SI4483EDY-T1-GE3

Transistor Polarity
P Channel
Continuous Drain Current Id
-14A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
14mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4483EDY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4483EDY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
b
8
6
4
2
0
0
Gate-Current vs. Gate-Source Voltage
5
a
a
V
GS
a
- Gate-to-Source Voltage (V)
10
J
= 25 °C, unless otherwise noted
a
15
Symbol
R
V
I
t
t
I
I
D(on)
DS(on)
V
GS(th)
d(on)
d(off)
GSS
DSS
g
t
SD
t
fs
r
f
20
25
V
I
D
DS
≅ - 1 A, V
= - 30 V, V
V
V
V
V
V
V
V
V
V
I
30
DS
DS
DS
GS
DS
DS
GS
S
DD
DS
= - 2.7 A, V
Test Conditions
= V
= - 5 V, V
= 0 V, V
= - 4.5 V, I
= 0 V, V
= - 10 V, I
= - 15 V, I
= - 30 V, V
= - 15 V, R
GEN
GS
GS
, I
= - 10 V, R
D
GS
GS
= 0 V, T
GS
= - 250 µA
D
D
D
GS
= ± 4.5 V
GS
= ± 25 V
L
= - 14 A
= - 14 A
= - 10 V
= - 11 A
= 15 Ω
= 0 V
= 0 V
J
0.0001
= 70 °C
0.001
g
0.01
= 6 Ω
100
0.1
10
1
0
Gate Current vs. Gate-Source Voltage
6
Min.
- 1.0
- 30
V
T
GS
J
= 150 °C
- Gate-to-Source Voltage (V)
T
J
12
= 25 °C
0.0115
0.007
- 0.74
Typ.
60
10
20
42
50
S-83038-Rev. D, 22-Dec-08
Document Number: 72862
18
0.0085
0.014
Max.
- 3.0
± 10
- 1.1
- 10
± 1
- 1
15
30
65
80
24
Unit
mA
µA
µA
µs
Ω
V
A
S
V
30

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