BSP171P Infineon Technologies, BSP171P Datasheet - Page 7

• Manufacturer Part Number: BSP171P
• Description: P CH MOSFET, -60V, 1.45A, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP171P

• Transistor Polarity: P Channel
• Continuous Drain Current Id: 1.45A
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -1.5V
• Package: SOT-223
• Vds (max): -60.0 V
• Rds (on) (max) (@10v): 300.0 mOhm
• Rds (on) (max) (@4.5v): 450.0 mOhm
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Rev 2.3
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
0.1
10
70
65
60
55
50
45
40
AV
1
=f(T
-60
); R
1
j
GS
); I
j(start)
=25
-20
D
=-1 mA
10
20
t
T
AV
j
60
[°C]
[µs]
100
100
C °125
140
C °100
C °25
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g (th)
g s(th)
GS
0
gate
); I
DD
Q
D
=-1.9 A pulsed
g s
5
0.2 VBR(DSS)
Q
Q
gate
g
Q
sw
[nC]
Q
g d
10
0.5 VBR(DSS)
0.8 VBR(DSS)
BSP171P
2005-11-29
Q
gate
15