BSP171P Infineon Technologies, BSP171P Datasheet

P CH MOSFET, -60V, 1.45A, SOT-223

BSP171P

Manufacturer Part Number
BSP171P
Description
P CH MOSFET, -60V, 1.45A, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP171P

Transistor Polarity
P Channel
Continuous Drain Current Id
1.45A
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
400mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-1.5V
Package
SOT-223
Vds (max)
-60.0 V
Rds (on) (max) (@10v)
300.0 mOhm
Rds (on) (max) (@4.5v)
450.0 mOhm
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP171P
Manufacturer:
INFINEON
Quantity:
30 000
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Part Number:
BSP171P E6327
Quantity:
1 916
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Part Number:
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12 000
Part Number:
BSP171P L6327
Manufacturer:
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Quantity:
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Part Number:
BSP171P L6327
Quantity:
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Part Number:
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Part Number:
BSP171PH6327
0
Part Number:
BSP171PH6327XTSA1
Manufacturer:
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Quantity:
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Rev 2.3
SIPMOS
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
BSP 171 P
®
Small-Signal-Transistor
Package
PG-SOT-223
j
=25 °C, unless otherwise specified
Tape and Reel Information
L6327
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
stg
T
T
T
I
I
V
di /dt =-200 A/µs,
T
T
D
D
A
A
A
j,max
A
DS
=-1.9 A, R
=-1.9 A,
page 1
=25 °C
=70 °C
=25 °C
=25 °C
=-48 V,
=150 °C
1)
1)
1)
GS
Product Summary
V
R
I
D
=25
DS
DS(on),max
Marking
171P
steady state
-55 ... 150
55/150/56
Value
-1.9
-1.5
-7.6
±20
1.8
PG-SOT-223
70
-6
-1.9
-60
0.3
BSP171P
2005-11-29
Unit
A
mJ
kV/µs
V
W
°C
V
A

Related parts for BSP171P

BSP171P Summary of contents

Page 1

... Tape and Reel Information L6327 Symbol Conditions =25 ° =70 ° =25 °C D,pulse =-1 = =-1 =- /dt di /dt =-200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSP171P -60 0.3 -1.9 PG-SOT-223 Marking 171P Value Unit steady state -1.9 A -1.5 -7 kV/µs ±20 V 1.8 W -55 ... 150 °C 55/150/56 2005-11- ...

Page 2

... GS(th) I =-460 µ =- DSS T =25 ° =- =125 ° =- GSS =-4 DS(on) I =-1 =- =-1 |>2 DS(on)max =-1 (one layer, 70 µm thick) copper area for drain page 2 Values min. typ. max 110 - -1 -0 -10 -100 = -10 -100 - 0.3 0.45 - 0.21 0.3 , 1.4 2.7 - BSP171P Unit K/W V µ 2005-11-29 ...

Page 3

... Symbol Conditions C iss oss V =- MHz DS C rss t d(on =-1 d(off =- =1 - plateau oss =25 ° S,pulse =1 =25 ° =- =| /dt =100 A/µ page 3 BSP171P Values Unit min. typ. max. - 365 460 pF - 105 135 - 208 276 - 87 130 - -1.2 -1 - -7.6 - -0.84 -1 120 ns - -125 -190 nC 2005-11-29 ...

Page 4

... DS Rev 2.3 2 Drain current I =f 1.5 1 0.5 0 120 160 4 Max. transient thermal impedance Z =f(t thJA parameter µs 100 µ 100 100 10 [V] page 4 |≥ 120 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p BSP171P 160 2005-11-29 ...

Page 5

... Typ. transfer characteristics I =f |>2 DS(on)max parameter °125 Rev 2.3 6 Typ. drain-source on resistance R =f(I DS(on) parameter: V 600 -4 V 500 400 -3.5 V 300 200 -3 V 100 -2 [V] 8 Typ. forward transconductance g =f ° [V] page =25 ° -3 [A] D =25 ° [A] D BSP171P - 2005-11-29 ...

Page 6

... Typ. gate threshold voltage V =f(T GS(th) 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode I =f parameter [V] page =-460 µ max. typ. min. - 100 T [° 150 °C, typ 150 °C, 98% 25 °C, 98 [V] SD BSP171P 140 180 25 °C, typ 1.5 2005-11-29 ...

Page 7

... Drain-source breakdown voltage V =f =-1 mA BR(DSS -60 - [°C] j Rev 2.3 14 Typ. gate charge V =f gate parameter ° °100 6 C °125 100 1000 0 16 Gate charge waveforms s(th (th) 100 140 180 page 7 BSP171P =-1.9 A pulsed D DD 0.5 VBR(DSS) 0.2 VBR(DSS) 0.8 VBR(DSS [nC] gate 2005-11- gate ...

Page 8

... Package Outline SOT-223: Outline Footprint Dimensions in mm Rev 2.3 Packaging Tape page 8 BSP171P 2005-11-29 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 2.3 page 9 BSP171P 2005-11-29 ...

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