SI2319DS-T1-GE3 Vishay, SI2319DS-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI2319DS-T1-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI2319DS-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.3A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 750mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72315.
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
0.01
0.1
2
1
10
-4
0.1
Duty Cycle = 0.5
0.2
0.02
0.05
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
-1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
10
A
t
1
= P
t
2
DM
Z
thJA
Vishay Siliconix
thJA
t
t
1
2
(t)
= 166 °C/W
Si2319DS
100
www.vishay.com
600
5