SI2319DS-T1-GE3 Vishay, SI2319DS-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI2319DS-T1-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI2319DS-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.3A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 750mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Si2319DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
20
10
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
I
D
SD
T
0
= 250 µA
J
- Source-to-Drain Voltage (V)
Threshold Voltage
= 150 °C
0.4
T
J
25
- Temperature (°C)
0.6
50
100.0
10.0
0.01
75
1.0
0.1
0.8
0.1
T
100
J
* V
= 25 °C
Limited by
Safe Operating Area, Junction-to-Case
R
1.0
GS
DS(on)
125
(
> minimum V
V
Single Pulse
T
DS
*
A
= 25 °C
- Drain-to-Source Voltage (V)
1.2
150
1
GS
at which R
10
DS(on)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
is specified
0.01
0
On-Resistance vs. Gate-to-Source Voltage
10 ms
10 µs
100 µs
1 ms
100 ms
10 s, 1 s
100 s, DC
100
0.1
V
2
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
4
1
Time (s)
Single Pulse
T
A
I
S09-0130-Rev. C, 02-Feb-09
D
= 25 °C
= 3 A
Document Number: 72315
10
6
100
8
10
1000