SI2319DS-T1-E3 Vishay, SI2319DS-T1-E3 Datasheet

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SI2319DS-T1-E3

Manufacturer Part Number
SI2319DS-T1-E3
Description
MOSFET P-CH 40V 2.3A SOT23-3
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI2319DS-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
82 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
2.3A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
17nC @ 10V
Input Capacitance (ciss) @ Vds
470pF @ 20V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.082 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
2.3 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-3A
Drain Source Voltage Vds
-40V
On Resistance Rds(on)
130mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
-3V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2319DS-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2319DS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
202 803
Part Number:
SI2319DS-T1-E3
Manufacturer:
VISHAY
Quantity:
220
Part Number:
SI2319DS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI2319DS-T1-E3
Quantity:
70 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
For Spice model information via the worldwide web: www.vishay.com/www/product/spice.htm.
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
- 40
(V)
b
0.130 at V
0.082 at V
a
R
DS(on)
J
= 150 °C)
b
c
GS
GS
Ordering Information: Si2319DS-T1-E3 (Lead (Pb)-free)
= - 4.5 V
(Ω)
= - 10 V
P-Channel 40-V (D-S) MOSFET
b
b
A
G
I
S
D
Si2319DS-T1-GE3 (Lead (Pb)-free and Halogen-free)
= 25 °C, unless otherwise noted
- 3.0
- 2.4
(A)
T
T
T
T
1
2
A
A
A
A
b
= 25 °C
= 70 °C
= 25 °C
= 70 °C
*Marking Code
Si2319DS (C9)*
(SOT-23)
Top View
TO-236
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• Load Switch
3
Symbol
Symbol
T
R
R
J
Available
TrenchFET
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
D
stg
®
Power MOSFET
Typical
- 3.0
- 2.4
- 1.0
1.25
120
5 s
0.8
75
40
- 55 to 150
± 20
- 40
- 12
Steady State
Maximum
- 1.85
- 0.62
- 2.3
0.75
0.48
100
166
50
Vishay Siliconix
Si2319DS
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI2319DS-T1-E3 Summary of contents

Page 1

... PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.082 0.130 4 Ordering Information: Si2319DS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage b Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) b Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... Si2319DS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... On-Resistance vs. Drain Current Total Gate Charge (nC) g Gate Charge Document Number: 72315 S09-0130-Rev. C, 02-Feb- Si2319DS Vishay Siliconix 125 ° ° °C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 700 600 C 500 iss 400 300 200 C oss ...

Page 4

... Si2319DS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.6 0.4 0 250 µA D 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com °C J 0.8 1.0 1.2 75 100 125 150 100.0 Limited by ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72315. Document Number: 72315 S09-0130-Rev. C, 02-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si2319DS Vishay Siliconix Notes ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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