SI2319DS-T1-GE3 Vishay, SI2319DS-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI2319DS-T1-GE3
• Description: P CH MOSFET
• Manufacturer: Vishay

Specifications of SI2319DS-T1-GE3

• Transistor Polarity: P Channel
• Continuous Drain Current Id: -2.3A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 65mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Power Dissipation Pd: 750mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
0.20
0.16
0.12
0.08
0.04
0.00
20
16
12
10
8
4
0
8
6
4
2
0
0
0
0
V
I
D
DS
V
= 3 A
2
On-Resistance vs. Drain Current
2
GS
= 20 V
2
V
= 4.5 V
DS
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
V
I
4
D
4
- Total Gate Charge (nC)
GS
- Drain Current (A)
Gate Charge
4
= 10 V thru 5 V
6
6
1 V, 2 V
6
8
8
V
GS
8
= 10 V
10
10
4 V
3 V
10
12
12
800
700
600
500
400
300
200
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
12
10
0
8
6
4
2
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
0.5
- 25
V
I
rss
D
5
GS
= 3 A
= 10 V
1.0
V
V
10
GS
Transfer Characteristics
DS
T
0
J
C
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
oss
1.5
15
25
Capacitance
2.0
T
25 °C
20
50
C
Vishay Siliconix
= 125 °C
C
2.5
iss
25
75
Si2319DS
3.0
- 55 °C
www.vishay.com
100
30
3.5
125
35
4.0
150
4.5
40
3