BSP299 Infineon Technologies, BSP299 Datasheet - Page 6

N CH MOSFET, 500V, 400mA, SOT-223

BSP299

Manufacturer Part Number
BSP299
Description
N CH MOSFET, 500V, 400mA, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP299

Transistor Polarity
N Channel
Continuous Drain Current Id
400mA
Drain Source Voltage Vds
500V
On Resistance Rds(on)
4ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Package
SOT-223
Vds (max)
500.0 V
Rds (on) (max) (@10v)
4,000.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
Semiconductor Group
D
I
I
D
D
=
0.9
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
2.6
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
A
A
DS
0
0
)
P
tot
1
p
2
= 2W
p
= 80 µs , T
l
c
k
i
f
d
j
g
h
e
= 80 µs
2
4
3
b
6
4
j
= 25 °C
8
5
6
10
D
= f ( V
7
12
a
8
GS
V GS [V]
V
a
b
c
d
e
f
g
h
i
j
k
l
V
V
DS
GS
)
V
10.0
20.0
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
16
10
6
Typ. drain-source on-resistance
R
parameter: t
R
Typ. forward transconductance g
parameter: t
g
DS (on)
DS (on)
fs
2.6
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
13
11
10
0.00
S
9
8
7
6
5
4
3
2
1
0
0.0
=
V
GS
4.0
a
p
I
[V] =
D
p
0.10
4.5
= 80 µs, T
b
)
0.4
= 80 µs,
5.0
c
0.20
5.5
d
0.8
6.0
e
j
= 25 °C
0.30
6.5
f
1.2
7.0
g
a
0.40
7.5
h
l
1.6
8.0
fs
i
j
h
Sep-12-1996
BSP 299
= f ( I
9.0
j
A
d
I
D
A
I
b
D
f
i
g
c
10.0
k
k
e
D
0.60
)
20.0
2.2
l

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