BSP299 Infineon Technologies, BSP299 Datasheet - Page 2

• Manufacturer Part Number: BSP299
• Description: N CH MOSFET, 500V, 400mA, SOT-223
• Manufacturer: Infineon Technologies

Specifications of BSP299

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 400mA
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 4ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Package: SOT-223
• Vds (max): 500.0 V
• Rds (on) (max) (@10v): 4,000.0 mOhm
• Rds (on) (max) (@4.5v): -
• Rds (on) (max) (@2.5v): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
Electrical Characteristics, at T
Semiconductor Group
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Therminal resistance, junction-soldering point
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
GS
GS =
DS
DS
GS
GS
= 500 V, V
= 500 V, V
= 0 V, I
= 20 V, V
= 10 V, I
V
DS,
I
D
D
= 1 mA
D
= 0.25 mA, T
DS
GS
GS
= 0.4 A
= 0 V
= 0 V, T
= 0 V, T
j
j
j
= 25 °C
= 125 °C
= 0 °C
j
= 25°C, unless otherwise specified
2
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
1)
2
copper area for drain connection
Symbol
T
T
R
R
j
stg
thJA
thJS
min.
-
-
-
-
500
2.1
Values
typ.
-
3
0.1
10
10
3.5
-55 ... + 150
-55 ... + 150
55 / 150 / 56
Values
E
70
10
max.
-
4
1
100
100
4
Sep-12-1996
BSP 299
Unit
°C
K/W
Unit
V
µA
nA