BSP299 Infineon Technologies, BSP299 Datasheet

N CH MOSFET, 500V, 400mA, SOT-223

BSP299

Manufacturer Part Number
BSP299
Description
N CH MOSFET, 500V, 400mA, SOT-223
Manufacturer
Infineon Technologies
Datasheet

Specifications of BSP299

Transistor Polarity
N Channel
Continuous Drain Current Id
400mA
Drain Source Voltage Vds
500V
On Resistance Rds(on)
4ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Package
SOT-223
Vds (max)
500.0 V
Rds (on) (max) (@10v)
4,000.0 mOhm
Rds (on) (max) (@4.5v)
-
Rds (on) (max) (@2.5v)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSP299
Manufacturer:
TOS
Quantity:
5 510
Company:
Part Number:
BSP299 H6327
Quantity:
9 000
Part Number:
BSP299 L6327
Manufacturer:
Infineon
Quantity:
7 200
Part Number:
BSP299L3627
Manufacturer:
NEC
Quantity:
2 935
Part Number:
BSP299L6327
Manufacturer:
INF
Quantity:
5 060
SIPMOS
• N channel
• Enhancement mode
• Avalanche rated
• V
Semiconductor Group
Type
BSP 299
Type
BSP 299
Maximum Ratings
Parameter
Continuous drain current
T
DC drain current, pulsed
T
Avalanche energy, single pulse
I
L = 163 mH, T
Gate source voltage
Power dissipation
T
D
A
A
A
GS(th)
= 1.2 A, V
= 44 °C
= 25 °C
= 25 °C
= 2.1 ... 4.0 V
®
Small-Signal Transistor
DD
j
= 25 °C
= 50 V, R
V
500 V
Ordering Code
Q67000-S225
DS
GS
I
0.4 A
D
= 25
R
4
Tape and Reel Information
E6327
DS(on)
1
Symbol
I
I
E
V
P
D
Dpuls
AS
GS
tot
Package
SOT-223
Pin 1
G
Values
Pin 2
130
Marking
BSP 299
0.4
1.6
1.8
D
20
Pin 3
S
Sep-12-1996
BSP 299
Unit
A
mJ
V
W
Pin 4
D

Related parts for BSP299

BSP299 Summary of contents

Page 1

SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • 2.1 ... 4.0 V GS(th) Type V DS BSP 299 500 V Type Ordering Code BSP 299 Q67000-S225 Maximum Ratings Parameter Continuous drain current ...

Page 2

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance DS(on)max, D Input capacitance MHz GS DS Output capacitance ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current °C A Inverse diode direct current,pulsed °C A Inverse diode forward voltage 0 ...

Page 5

Power dissipation tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : ...

Page 6

Typ. output characteristics parameter µ ° 0 tot 0.7 ...

Page 7

Drain-source on-resistance (on) j parameter 0 (on 98% 5 typ -60 - ...

Page 8

Avalanche energy parameter 1 163 mH GS 140 mJ 120 E 110 AS 100 ...

Page 9

Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 BSP 299 Sep-12-1996 ...

Related keywords