SI7922DN-T1-E3 Vishay, SI7922DN-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI7922DN-T1-E3
• Description: DUAL N CH MOSFET, 100V, POWERPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7922DN-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.5V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7922DN-T1-E3TR

Si7922DN
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS T
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2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Source-Drain Reverse Recovery Time
b
10
8
6
4
2
0
0
1
a
a
V
Output Characteristics
DS
2
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
3
V
GS
a
3 V
= 10 thru 6 V
4
Symbol
R
V
I
t
t
I
I
DS(on)
GS(th)
D(on)
V
Q
5
Q
d(on)
d(off)
GSS
DSS
Q
g
R
t
t
t
SD
5 V
rr
fs
gs
gd
r
f
4 V
g
g
A
= 25 °C, unless otherwise noted
6
V
V
I
7
DS
DS
D
≅ 1 A, V
I
= 100 V, V
F
= 50 V, V
V
V
V
V
V
= 2.2 A, dI/dt = 100 A/µs
V
V
DS
I
DS
DS
V
S
8
DD
DS
GS
DS
GS
Test Conditions
= 2.2 A, V
= 0 V, V
= V
= 100 V, V
≥ 5 V, V
= 50 V, R
= 10 V, I
= 10 V, I
= 6 V, I
GEN
GS
GS
GS
, I
= 4.5 V, R
= 10 V, I
GS
D
= 0 V, T
GS
D
D
D
GS
= 250 µA
L
= 2.3 A
GS
= ± 20 V
= 2.5 A
= 2.5 A
= 10 V
= 50 Ω
= 0 V
= 0 V
D
J
G
= 85 °C
= 2.5 A
= 6 Ω
10
8
6
4
2
0
0
1
Min.
2.5
10
V
Transfer Characteristics
GS
- Gate-to-Source Voltage (V)
2
0.162
0.190
Typ.
5.3
0.8
5.2
1.1
1.9
1.7
11
11
40
T
7
8
C
25 °C
= 125 °C
3
S-81544-Rev. E, 07-Jul-08
Document Number: 72031
± 100
0.195
0.230
Max.
3.5
1.2
4
15
20
15
20
80
1
5
8
- 55 °C
5
Unit
nC
nA
µA
ns
Ω
Ω
V
A
S
V
6