SI7922DN-T1-E3 Vishay, SI7922DN-T1-E3 Datasheet

DUAL N CH MOSFET, 100V, POWERPAK

SI7922DN-T1-E3

Manufacturer Part Number
SI7922DN-T1-E3
Description
DUAL N CH MOSFET, 100V, POWERPAK
Manufacturer
Vishay
Series
TrenchFET®r
Datasheets

Specifications of SI7922DN-T1-E3

Transistor Polarity
N Channel
Continuous Drain Current Id
25A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.5V
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
195 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7922DN-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7922DN-T1-E3
Manufacturer:
VISHAY
Quantity:
12 000
Part Number:
SI7922DN-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
46 570
Part Number:
SI7922DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7922DN-T1-E3
Quantity:
70 000
Part Number:
SI7922DN-T1-E3(GE3)
0
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72031
S-81544-Rev. E, 07-Jul-08
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
100
(V)
8
D1
3.30 mm
7
D1
0.195 at V
0.230 at V
http://www.vishay.com/ppg?73257
6
D2
Si7922DN-T1-E3 (Lead (Pb)-free)
Si7922DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
PowerPAK 1212-8
Bottom View
DS(on)
5
D2
J
a
b, c
GS
= 150 °C)
Dual N-Channel 100-V (D-S) MOSFET
a
GS
(Ω)
= 10 V
1
= 6 V
S1
2
a
G1
3
S2
3.30 mm
4
a
G2
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
I
A
D
2.5
2.3
Steady State
Steady State
(A)
= 25 °C, unless otherwise noted
t ≤ 10 s
T
T
T
T
A
A
A
A
0.1 mH
= 25 °C
= 85 °C
= 25 °C
= 85 °C
Symbol
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• New Low Thermal Resistance PowerPAK
• PWM Optimized
• DC/DC Primary-Side Switch
• 48 V Battery Monitoring
Symbol
T
R
R
J
thJC
V
V
thJA
E
I
I
P
, T
Package, 1/3 the Space of An SO-8 While
Thermally Comparable
DM
I
AS
I
DS
GS
D
AS
S
D
stg
G
1
N-Channel MOSFET
®
Typical
Power MOSFET
4.3
10 s
D
S
38
77
2.5
1.8
2.2
2.6
1.4
1
1
- 55 to 150
± 20
1.25
100
260
10
5
G
2
Maximum
Steady State
N-Channel MOSFET
5.4
48
94
0.69
Vishay Siliconix
1.8
1.3
1.1
1.3
D
S
Si7922DN
2
2
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
A
RoHS
COMPLIANT
1

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SI7922DN-T1-E3 Summary of contents

Page 1

... PowerPAK 1212 Bottom View Ordering Information: Si7922DN-T1-E3 (Lead (Pb)-free) Si7922DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction) a ...

Page 2

... Si7922DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72031 S-81544-Rev. E, 07-Jul- °C, unless otherwise noted °C J 0.8 1.0 1.2 Si7922DN Vishay Siliconix 320 280 240 C iss 200 160 120 80 C oss 40 C rss Drain-to-Source Voltage (V) DS Capacitance 2.2 ...

Page 4

... Si7922DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0.6 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com °C, unless otherwise noted A = 250 µ 100 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72031. Document Number: 72031 S-81544-Rev. E, 07-Jul- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7922DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... TYP. 2.3 TYP. 3.30 3.40 3.05 3.15 1.60 1.73 1.85 1.98 0.34 TYP. 0.65 BSC 0.86 TYP 0.41 0.51 0.43 0.56 0.13 0.20 - 12° 0.25 0.36 0.125 TYP. Package Information Vishay Siliconix Backside View of Single Pad Backside View of Dual Pad INCHES MIN ...

Page 7

... To take the advantage of the single PowerPAK 1212-8’s thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...

Page 8

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the Pow- erPAK 1212-8 dual package ...

Page 9

... A subsequent experiment was run where the copper on the back-side was reduced, first stripes to mimic circuit traces, and then totally removed. No signif- icant effect was observed. whereas a rise DS(ON) as high DS(ON) Vishay Siliconix TSOP-8 PPAK 1212 Dual Single Dual Single ...

Page 10

... AN822 Vishay Siliconix 105 Spreading Copper (sq. in 100 % 0.00 0.25 0.50 0.75 1.00 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 uses the same packaging technology and has been shown to have the same level of thermal perfor- mance while having a footprint that is more than 40 % smaller than the standard TSSOP-8 ...

Page 11

... Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK 0.039 (0.990) (0.990) 0.016 (0.405) 0.016 (0.405) 0.026 (0.660) 0.026 (0.660) 0.025 (0.635) Return to Index Return to Index www.vishay.com 1 ® 1212-8 Dual 0.152 (3.860) 0.152 (3.860) 0.068 0.039 0.068 (1.725) (1.725) 0.039 (0 ...

Page 12

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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