Si7922DN Vishay Intertechnology, Si7922DN Datasheet
Si7922DN
Manufacturer Part Number
Si7922DN
Description
Dual N-channel 100-V (D-S) MOSFET
Manufacturer
Vishay Intertechnology
Datasheet
1.SI7922DN.pdf
(5 pages)
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Notes
a.
Document Number: 72031
S-31864—Rev. B, 15-Sep-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
100
100
(V)
J
8
ti
D1
3.30 mm
7
t A bi
D1
6
PowerPAK 1212-8
D2
J
J
a
a
0.195 @ V
5
= 150_C)
= 150_C)
t
0.230 @ V
a
a
Bottom View
D2
Parameter
Parameter
r
DS(on)
Dual N-Channel 100-V (D-S) MOSFET
1
a
a
GS
S1
GS
(W)
= 10 V
= 6 V
2
G1
a
3
S2
3.30 mm
4
G2
Ordering Information: Si7922DN-T1
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
0 1 mH
0.1 mH
I
= 25_C
= 85_C
= 25_C
= 85_C
D
2.5
2.3
(A)
Symbol
Symbol
T
R
R
R
V
V
J
E
I
I
P
P
, T
DM
thJC
I
I
AS
I
thJA
DS
GS
D
D
AS
S
D
D
stg
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr
D PWM Optimized
APPLICATIONS
D DC/DC Primary-Side Switch
D 48-V Battery Monitoring
G
Package,
Thermally Comparable
1
10 secs
Typical
N-Channel MOSFET
2.5
1.8
2.2
2.6
1.4
4.3
38
77
S
D
1
1
-55 to 150
1
/
3
"20
1.25
100
the Space of An SO-8 While
10
5
Steady State
Maximum
Vishay Siliconix
G
2
0.69
1.8
1.3
1.1
1.3
5.4
48
94
N-Channel MOSFET
Si7922DN
D
S
2
2
www.vishay.com
Unit
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
A
A
1
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