SI7922DN-T1-GE3 Vishay, SI7922DN-T1-GE3 Datasheet

MOSFET DL N-CH 100V PPAK 1212-8

SI7922DN-T1-GE3

Manufacturer Part Number
SI7922DN-T1-GE3
Description
MOSFET DL N-CH 100V PPAK 1212-8
Manufacturer
Vishay
Datasheet

Specifications of SI7922DN-T1-GE3

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
195 mOhm @ 2.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
1.8A
Vgs(th) (max) @ Id
3.5V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 10V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
PowerPAK® 1212-8 Dual
Transistor Polarity
N Channel
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
20V
Threshold Voltage Vgs Typ
3.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI7922DN-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7922DN-T1-GE3
Manufacturer:
Vishay/Siliconix
Quantity:
30 260
Company:
Part Number:
SI7922DN-T1-GE3
Quantity:
9 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72031
S-81544-Rev. E, 07-Jul-08
Ordering Information:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
100
(V)
8
D1
3.30 mm
7
D1
0.195 at V
0.230 at V
http://www.vishay.com/ppg?73257
6
D2
Si7922DN-T1-E3 (Lead (Pb)-free)
Si7922DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
PowerPAK 1212-8
Bottom View
DS(on)
5
D2
J
a
b, c
GS
= 150 °C)
Dual N-Channel 100-V (D-S) MOSFET
a
GS
(Ω)
= 10 V
1
= 6 V
S1
2
a
G1
3
S2
3.30 mm
4
a
G2
). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
I
A
D
2.5
2.3
Steady State
Steady State
(A)
= 25 °C, unless otherwise noted
t ≤ 10 s
T
T
T
T
A
A
A
A
0.1 mH
= 25 °C
= 85 °C
= 25 °C
= 85 °C
Symbol
FEATURES
APPLICATIONS
• Halogen-free Option Available
• TrenchFET
• New Low Thermal Resistance PowerPAK
• PWM Optimized
• DC/DC Primary-Side Switch
• 48 V Battery Monitoring
Symbol
T
R
R
J
thJC
V
V
thJA
E
I
I
P
, T
Package, 1/3 the Space of An SO-8 While
Thermally Comparable
DM
I
AS
I
DS
GS
D
AS
S
D
stg
G
1
N-Channel MOSFET
®
Typical
Power MOSFET
4.3
10 s
D
S
38
77
2.5
1.8
2.2
2.6
1.4
1
1
- 55 to 150
± 20
1.25
100
260
10
5
G
2
Maximum
Steady State
N-Channel MOSFET
5.4
48
94
0.69
Vishay Siliconix
1.8
1.3
1.1
1.3
D
S
Si7922DN
2
2
www.vishay.com
®
°C/W
Unit
Unit
mJ
°C
W
V
A
A
RoHS
COMPLIANT
1

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SI7922DN-T1-GE3 Summary of contents

Page 1

... Bottom View Ordering Information: Si7922DN-T1-E3 (Lead (Pb)-free) Si7922DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si7922DN Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72031 S-81544-Rev. E, 07-Jul- °C, unless otherwise noted °C J 0.8 1.0 1.2 Si7922DN Vishay Siliconix 320 280 240 C iss 200 160 120 80 C oss 40 C rss Drain-to-Source Voltage (V) DS Capacitance 2.2 ...

Page 4

... Si7922DN Vishay Siliconix TYPICAL CHARACTERISTICS T 0.6 0.4 0.2 I 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com °C, unless otherwise noted A = 250 µ 100 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72031. Document Number: 72031 S-81544-Rev. E, 07-Jul- °C, unless otherwise noted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7922DN Vishay Siliconix - www.vishay.com 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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