SI7922DN-T1-E3 Vishay, SI7922DN-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7922DN-T1-E3
• Description: DUAL N CH MOSFET, 100V, POWERPAK
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7922DN-T1-E3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 230mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.5V
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 195 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 3.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7922DN-T1-E3TR

TYPICAL CHARACTERISTICS T
Document Number: 72031
S-81544-Rev. E, 07-Jul-08
0.5
0.4
0.3
0.2
0.1
0.0
10
10
8
6
4
2
0
1
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 2.5 A
0.2
On-Resistance vs. Drain Current
= 50 V
1
2
V
SD
Q
- Source-to-Drain Voltage (V)
g
T
0.4
- Total Gate Charge (nC)
V
J
I
2
D
GS
= 150 °C
Gate Charge
- Drain Current (A)
4
= 6 V
0.6
3
6
0.8
4
A
V
= 25 °C, unless otherwise noted
GS
T
J
8
1.0
= 25 °C
= 10 V
5
1.2
10
6
320
280
240
200
160
120
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.5
0.4
0.3
0.2
0.1
0.0
80
40
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
rss
V
I
- 25
D
GS
= 2.5 A
= 10 V
20
2
V
V
DS
GS
T
0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
2 5
Capacitance
40
4
C
C
oss
5 0
Vishay Siliconix
iss
60
6
I
7 5
D
Si7922DN
= 2.5 A
www.vishay.com
100
80
8
125
100
150
10
3