2MBI100TA-60-50 FUJI ELECTRIC, 2MBI100TA-60-50 Datasheet - Page 4

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2MBI100TA-60-50

Manufacturer Part Number
2MBI100TA-60-50
Description
IGBT MODULE, 600V, 100A
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 2MBI100TA-60-50

Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
100A
Collector Emitter Voltage Vces
2.8V
Power Dissipation Max
400W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case
RoHS Compliant
Power Dissipation Pd
400W
Rohs Compliant
Yes
2MBI100TA-060
Outline Drawings, mm
M232
0.01
0.1
200
100
0.001
2
1
0
0
Forward current vs. Forward on voltage (typ.)
Transient thermal resistance
Forward on voltage : VF [ V ]
Pulse width : Pw [ sec ]
0.01
1
[ Inverter ]
Tj=125C
0.1
2
Tj=25C
IGBT
FWD
1
3
300
100
10
0
Reverse recovery characteristics (typ.)
Vcc=300V, VGE=+-15V, Rg=33ohm
Forward current : IF [ A ]
[ Inverter ]
100
Irr(25C)
trr(125C)
trr(25C)
Irr(125C)
IGBT Module
200

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