2MBI100TA-60-50 FUJI ELECTRIC, 2MBI100TA-60-50 Datasheet - Page 2

• Manufacturer Part Number: 2MBI100TA-60-50
• Description: IGBT MODULE, 600V, 100A
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI100TA-60-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 400W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 400W
• Rohs Compliant: Yes

2MBI100TA-060
Characteristics (Representative)
20000
10000
5000
1000
300
200
100
300
200
100
200
0
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
5
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
1
VGE=0V, f= 1MHz, Tj= 25C
1
10
VGE= 20V
VGE=15V (typ.)
Tj= 25C (typ.)
2
[ Inverter ]
[ Inverter ]
15
[ Inverter ]
2
15V
20
3
Tj= 25C
12V
25
3
4
30
Tj= 125C
Cies
Coes
Cres
10V
8V
35
5
4
300
200
100
500
400
300
200
100
12
10
0
8
6
4
2
0
0
0
5
0
Collector-Emitter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emitter voltage
100
Collector - Emitter voltage : VCE [ V ]
1
Gate - Emitter voltage : VGE [ V ]
10
Vcc=300V, Ic=100A, Tj= 25C
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
200
Tj= 125C (typ.)
Tj= 25C (typ.)
2
[ Inverter ]
[ Inverter ]
[ Inverter ]
VGE= 20V
300
15
3
400
15V
20
12V
IGBT Module
Ic=200A
Ic=100A
Ic=50A
4
500
8V
10V
600
25
5
25
20
15
10
5
0