2MBI100TA-60-50 FUJI ELECTRIC, 2MBI100TA-60-50 Datasheet

2MBI100TA-60-50

Manufacturer Part Number

2MBI100TA-60-50

Description

IGBT MODULE, 600V, 100A

Manufacturer

FUJI ELECTRIC

Datasheet

1.2MBI100TA-60-50.pdf (4 pages)

Specifications of 2MBI100TA-60-50

Module Configuration

Dual

Transistor Polarity

N Channel

Dc Collector Current

100A

Collector Emitter Voltage Vces

2.8V

Power Dissipation Max

400W

Collector Emitter Voltage V(br)ceo

600V

Transistor Case

RoHS Compliant

Power Dissipation Pd

400W

Rohs Compliant

Yes

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2MBI100TA-060

· High speed switching

· Voltage drive

· Low inductance module structure

· Inverter for Motor drive

· AC and DC Servo drive amplifier

· Uninterruptible power supply

· Industrial machines, such as Welding machines

Item

Collector-Emitter voltage

Gate-Emitter voltaga

Collector

current

Max. power dissipation

Operating temperature

Storage temperature

Isolation voltage

Screw torque

Item

Zero gate voltage collector current

Gate-Emitter leakage current

Gate-Emitter threshold voltage

Collector-Emitter saturation voltage

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on time

Turn-off time

Forward on voltage

Reverse recovery time

Allowabe avalamche wnergy

during short circuit cutting off

(Non-repetitive)

Item

Thermal resistance

Contact Thermal resistance

1 :

2 :

Thermal resistance characteristics

: This is the value which is defined mounting on the additional cooling fin with thermal compound

Electrical characteristics (at Tj=25°C unless otherwise specified)

Recommendable value : 2.5 to 3.5 N·m(M5)

All terminals should be connected together when isolation test will be done.

Absolute maximum ratings (at Tc=25°C unless otherwise specified)

Features

Applications

Maximum ratings and characteristics

Continuous

1ms

Continuous

1ms

Symbol

-I

Mounting *

Terminals *

Symbol

PAV

Rth(j-c)

Rth(c-f)*

CES

GES

off

stg

r(j)

CES

GES

Symbol

GE(th)

CE(sat)

ies

oes

res

pulse

Characteristics

Min.

Characteristics

Min.

Duty=100%

Conditions

Duty=50%

–

AC:1min.

1 device

Ic=1mA

–

6.2

–

1ms

Typ.

8500

1500

1300

Typ.

–

0.05

IGBT Module T-Series

–

6.7

1.8

2.0

0.4

0.25

0.1

0.4

0.04

1.7

2.0

–

600V / 100A 2 in one-package

-40 to +125

AC 2500 (1min.)

200

Max.

Rating

1.0

7.7

–

2.4

–

1.2

0.6

–

1.2

0.45

–

2.5

0.3

–

Max.

+150

0.400

1.02

–

600

±20

100

200

100

200

310

3.5

Chip

Terminal

f=1MHz

Chip

Terminal

Ic>200A, Tj=125°C

IGBT

FWD

With thermal compound

Conditions

=100A

=33 ohm

=0V, V

=20V, I

=0V, V

=0V

=10V

=300V

=±15V

Unit

°C

N·m

=100mA

=600V

=±20V

Equivalent Circuit Schematic

=15V, I

=100A

G1 E1

IGBT Module

C2E1

Unit

°C/W

µs

Unit

G2 E2

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2MBI100TA-60-50 Summary of contents

Page 1

... Features · High speed switching · Voltage drive · Low inductance module structure Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) ...

Page 2

... Characteristics (Representative) [ Inverter ] Collector current vs. Collector-Emitter voltage Tj= 25C (typ.) 300 VGE= 20V 200 100 Collector - Emitter voltage : VCE [ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.) 300 200 100 Collector - Emitter voltage : VCE [ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25C ...

Page 3

... Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=+-15V, Rg=33ohm, Tj= 25C 1000 100 100 Collector current : Inverter ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=+-15V, Tj= 25C 5000 1000 100 Gate resistance : Rg [ ohm ] [ Inverter ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=100A, VGE=+-15V, Tj= 125C ...

Page 4

... Inverter ] Forward current vs. Forward on voltage (typ.) 200 100 Forward on voltage : Transient thermal resistance 2 1 0.1 0.01 0.001 0.01 Pulse width : Pw [ sec ] Outline Drawings, mm M232 300 Tj=125C Tj=25C 100 FWD IGBT 0.1 1 IGBT Module [ Inverter ] Reverse recovery characteristics (typ.) Vcc=300V, VGE=+-15V, Rg=33ohm ...

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