2MBI100TA-60-50 FUJI ELECTRIC, 2MBI100TA-60-50 Datasheet - Page 3
![no-image](/images/no-image-200.jpg)
2MBI100TA-60-50
Manufacturer Part Number
2MBI100TA-60-50
Description
IGBT MODULE, 600V, 100A
Manufacturer
FUJI ELECTRIC
Datasheet
1.2MBI100TA-60-50.pdf
(4 pages)
Specifications of 2MBI100TA-60-50
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
100A
Collector Emitter Voltage Vces
2.8V
Power Dissipation Max
400W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case
RoHS Compliant
Power Dissipation Pd
400W
Rohs Compliant
Yes
2MBI100TA-060
1000
5000
1000
100
100
10
10
30
20
10
0
10
0
5
Vcc=300V, VGE=+-15V, Rg=33ohm, Tj= 25C
Vcc=300V, Ic=100A, VGE=+-15V, Tj= 125C
Vcc=300V, Ic=100A, VGE=+-15V, Tj= 25C
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
10
50
Gate resistance : Rg [ ohm ]
Gate resistance : Rg [ ohm ]
Collector current : Ic [ A ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
100
100
150
tr
ton
toff
tf
100
Eon
Eoff
Err
ton
toff
tr
tf
200
500
1000
100
300
200
100
10
10
5
0
0
0
0
0
+VGE=15V, -VGE<=15V, Rg>=33ohm, Tj<=125C
Vcc=300V, VGE=+-15V, Rg= 33ohm, Tj= 125C
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=33ohm
Collector - Emitter voltage : VCE [ V ]
Reverse bias safe operating area
200
50
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
100
100
400
150
600
Eon(25C)
Eoff(125C)
ton
toff
Eon(125C)
Eoff(25C)
Err(125C)
Err(25C)
tr
tf
IGBT Module
200
200
800