2MBI100TA-60-50 FUJI ELECTRIC, 2MBI100TA-60-50 Datasheet - Page 3

• Manufacturer Part Number: 2MBI100TA-60-50
• Description: IGBT MODULE, 600V, 100A
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI100TA-60-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 100A
• Collector Emitter Voltage Vces: 2.8V
• Power Dissipation Max: 400W
• Collector Emitter Voltage V(br)ceo: 600V
• Transistor Case: RoHS Compliant
• Power Dissipation Pd: 400W
• Rohs Compliant: Yes

2MBI100TA-060
1000
5000
1000
100
100
10
10
30
20
10
0
10
0
5
Vcc=300V, VGE=+-15V, Rg=33ohm, Tj= 25C
Vcc=300V, Ic=100A, VGE=+-15V, Tj= 125C
Vcc=300V, Ic=100A, VGE=+-15V, Tj= 25C
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
10
50
Gate resistance : Rg [ ohm ]
Gate resistance : Rg [ ohm ]
Collector current : Ic [ A ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
100
100
150
tr
ton
toff
tf
100
Eon
Eoff
Err
ton
toff
tr
tf
200
500
1000
100
300
200
100
10
10
5
0
0
0
0
0
+VGE=15V, -VGE<=15V, Rg>=33ohm, Tj<=125C
Vcc=300V, VGE=+-15V, Rg= 33ohm, Tj= 125C
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
Vcc=300V, VGE=+-15V, Rg=33ohm
Collector - Emitter voltage : VCE [ V ]
Reverse bias safe operating area
200
50
Collector current : Ic [ A ]
Collector current : Ic [ A ]
[ Inverter ]
[ Inverter ]
[ Inverter ]
100
100
400
150
600
Eon(25C)
Eoff(125C)
ton
toff
Eon(125C)
Eoff(25C)
Err(125C)
Err(25C)
tr
tf
IGBT Module
200
200
800