FF900R12IP4D Infineon Technologies, FF900R12IP4D Datasheet - Page 8
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FF900R12IP4D
Manufacturer Part Number
FF900R12IP4D
Description
IGBT Module
Manufacturer
Infineon Technologies
Specifications of FF900R12IP4D
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
900A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
5.1kW
No. Of Pins
10
Collector Emitter Saturation Voltage Vce(sat)
1.7V
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Rohs Compliant
Yes
Ic (max)
900.0 A
Vce(sat) (typ)
1.7 V
Configuration
dual
Technology
IGBT4
Housing
PrimePACK 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Technische Information / technical information
IGBT-Module
IGBT-modules
Schaltplan / circuit diagram
Gehäuseabmessungen / package outlines
FF900R12IP4D
8
Vorläufige Daten
preliminary data