FF900R12IP4D Infineon Technologies, FF900R12IP4D Datasheet - Page 7
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FF900R12IP4D
Manufacturer Part Number
FF900R12IP4D
Description
IGBT Module
Manufacturer
Infineon Technologies
Specifications of FF900R12IP4D
Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
900A
Collector Emitter Voltage Vces
1.2kV
Power Dissipation Pd
5.1kW
No. Of Pins
10
Collector Emitter Saturation Voltage Vce(sat)
1.7V
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Rohs Compliant
Yes
Ic (max)
900.0 A
Vce(sat) (typ)
1.7 V
Configuration
dual
Technology
IGBT4
Housing
PrimePACK 2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Technische Information / technical information
IGBT-Module
IGBT-modules
:_^p * R,nT
:_^p * R,nT
GW.- * + Q ]E "'( * Q
GW.- * + Q ]E "'( * Q
2
2
‚KYi' * R T
‚KYi' * R T
:_^p * R,nT
:_^p * R,nT
GW.- * + Q ]E "'( * Q
GW.- * + Q ]E "'( * Q
2
2
‚KYi' * R T
‚KYi' * R T
4
4
4
4
3
3
3
3
160
140
120
100
100
0,1
3 $
3 $
3 $
3 $
80
60
40
20
10
0
1
0,001
0
3 3 3 3
9#
9#
9#
9#
200 400 600 800 1000 1200 1400 1600 1800
%
%
%
%
:_^pE 2<= * + PU
:_^pE 2<= * +P U
‚KYi' %
0,01
4
4
4
4
9
9
9
9
"
"
"
"
3
3
3
3
\wC&79y
\w y
,n w y
%
%
%
%
0,1
R
R
R
R
R
R
R
R
w y
+
E+
E
FF900R12IP4D
9
9
9
9
T
T
T
T
3T
3T
3T
3T
E
E +
3
3
3
3
1
E P
EP
EQ
EQ
10
7
:_^p * RGWT
:_^p * RGWT
:_^p * RGWT
:_^p * RGWT
,n *
,n *
,n *
,n *
O2
O2
O2
O2
O2
O2
O2
O2
G * R2T
G * R2T
G * R2T
G * R2T
4
4
100000
4
4
10000
3
3
3
3
1000
140
120
100
100
3 $
3 $
3 $
3 $
80
60
40
20
2
2
2
2
0
0,0
0
E "'( * Q
E "'( * Q
E "'( * Q
E "'( * Q
2,0
20
%
%
%
%
:_^pE 2<= * + PU
:_^pE 2<= * +P U
GKƒ>
7
7
7
7
3
3
3
3
4,0
40
9
9
9
9
"
"
"
"
6,0
60
3
3
3
3
R
R
R
R
2' wU y
GW w]y
8,0 10,0 12,0 14,0 16,0
R
R
R
R
80
R
R
R
R
R
R
R
R
Vorläufige Daten
preliminary data
3T
3T
3T
3T
100 120 140 160
T
T
T
T
3T
3T
3T
3T
T
T
T
T