IXZ210N50L IXYS RF, IXZ210N50L Datasheet - Page 9

• Manufacturer Part Number: IXZ210N50L
• Description: MOSFET, N, RF, DE275
• Manufacturer: IXYS RF

Specifications of IXZ210N50L

• Drain Source Voltage Vds: 500V
• Continuous Drain Current Id: 10A
• Power Dissipation Max: 470W
• Operating Temperature Range: -55°C To +175°C
• Rf Transistor Case: DE275
• No. Of Pins: 6
• Transistor Type: RF MOSFET
• Package / Case: DE-275
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
4,860,072
5,049,961
5,640,045
4,881,106
5,063,307
6,404,065
4,891,686
5,187,117
6,583,505
4,931,844
5,237,481
6,710,463
IXZ210N50L & IXZ2210N50L
5,017,508
5,486,715
6,727,585
RF Power MOSFET
Doc #dsIXZ210N50L REV 06/04
© 2004 IXYS RF
A IXYS
2401 Research Blvd., Suite 108
Fort Collins, CO USA 80526
970-493-1901 Fax: [phone]
Email: [e-mail]
Web: http://www.ixysrf.com
Company