DEIC515 IXYS RF, DEIC515 Datasheet
DEIC515
Specifications of DEIC515
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DEIC515 Summary of contents
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... IN IN GND 15 Ampere Low-Side Ultrafast RF MOSFET Driver Description TheDEIC515 is a CMOS high speed high current gate driver specifically designed to drive MOSFETs in Class D and applications 45MHz, as well as other applications requiring ultrafast rise and fall times or short minimum pulse widths. The DEIC515 can source ...
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... Storage Temperature -40C to 150C Soldering Lead Temperature 300C (10 seconds maximum) Electrical Characteristics Unless otherwise noted < All voltage measurements with respect to DGND. DEIC515 configured as described in Test Conditions. Symbol Parameter High input voltage Low input voltage IL V Input voltage range IN I Input current ...
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... The guaranteed specifications apply only for the test conditions listed. Exposure CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD procedures when handling and assembling this component. Figure 2 - DEIC515 Package Photo And Outline 15 Ampere Low-Side Ultrafast RF MOSFET Driver DESCRIPTION Input for the positive output section power-supply voltage ...
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... The very high currents and high speeds inside the DEIC515 create very large transients. To avoid problems with false triggering, the input to the DEIC515 should be supplied via a common mode choke. This is a simple tri-filar winding on a small ferrite core. This prevents high speed transients from effecting the input signals, by allowing the input signals to follow the internal die potential changes without changing the state of the input ...