IXZ210N50L IXYS RF, IXZ210N50L Datasheet - Page 2

• Manufacturer Part Number: IXZ210N50L
• Description: MOSFET, N, RF, DE275
• Manufacturer: IXYS RF

Specifications of IXZ210N50L

• Drain Source Voltage Vds: 500V
• Continuous Drain Current Id: 10A
• Power Dissipation Max: 470W
• Operating Temperature Range: -55°C To +175°C
• Rf Transistor Case: DE275
• No. Of Pins: 6
• Transistor Type: RF MOSFET
• Package / Case: DE-275
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Zin= 0.59-J0.90
Zout= 5.86+J9.34
(1) - As measured under pulsed conditions (5 ms, 5%) with a gated Bias in
Symbol
C
C
C
C
T
T
T
T
VHF COMMUNICATIONS
Gps
Drain Efficiency
Load Mismatch
3T MRI
Gps(1)
Drain Efficiency
d(on)
on
d(off)
off
iss
oss
rss
stray
Class AB, at P1dB.
VDD= 50V, Pout=200W, f=175MHz
VDD=150V, P
VDD= 150V, Pout=300W, f=175MHz
Test Conditions
V
f = 1 MHz
Back Metal to any Pin
V
I
R
VDD= 50V, Pout=200W, f=175MHz
VDD= 50V, Pout=200W, f=175MHz
D
GS
GS
G
= 0.5 I
= 1 Ω (External)
= 0 V, V
= 15 V, V
OUT
=475W, F=128MHz
DM
DS
DS
= 0.8 V
= 0.8 V
DSS(MAX)
DSS
,
Characteristic Values
(
T
J
= 25°C unless otherwise specified)
560
50
10
IXZ210N50L & IXZ2210N50L
min.
min.
min.
13
50
12
60
RF Power MOSFET
typ.
622
typ.
typ.
77
12
21
13
65
4
3
4
5
TBD
max.
max.
max.
690
150
13
16
60
db
db
pF
pF
pF
pF
%
%
ns
ns
ns
ns