BLS6G3135-20 NXP Semiconductors, BLS6G3135-20 Datasheet - Page 7

• Manufacturer Part Number: BLS6G3135-20
• Description: LDMOS,RF,20W,3100M-3500MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-20

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 2.1A
• Operating Frequency Range: 2.7GHz To 3.1GHz
• Rf Transistor Case: SOT-608A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
8. Test information
Table 9.
See
[1]
[2]
BLS6G3135-20_6G3135S-20_3
Product data sheet
Component
C1, C2, C5, C6, C7, C8, C9
C3, C4, C10, C11
C12
C13
L1
R1
Fig 10. Component layout for 3.1 GHz to 3.5 GHz test circuit
American Technical Ceramics type 100A or capacitor of same quality.
American Technical Ceramics type 100B or capacitor of same quality.
Figure
C13
V
GG
Striplines are on a double copper-clad Rogers Duroid 6006 Printed-Circuit Board (PCB) with
See
10.
List of components
C3
Table 9
C4
C5
for list of components.
R1
C1
C6
Description
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
electrolytic capacitor
electrolytic capacitor
copper wire
resistor
BLS6G3135-20; BLS6G3135S-20
Rev. 03 — 3 March 2009
/ 4-line
C7
C9
C8
LDMOS S-Band radar power transistor
C10
Value
33 pF
470 pF
47 F; 63 V
10 F; 35 V
-
49.9
C2
C11
/ 4-line
L1
r
= 6.2 and thickness = 0.64 mm.
V
DD
© NXP B.V. 2009. All rights reserved.
[1]
[2]
C12
Remarks
001aah590
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