BLS6G3135-20 NXP Semiconductors, BLS6G3135-20 Datasheet - Page 2

• Manufacturer Part Number: BLS6G3135-20
• Description: LDMOS,RF,20W,3100M-3500MHZ,32V
• Manufacturer: NXP Semiconductors

Specifications of BLS6G3135-20

• Drain Source Voltage Vds: 60V
• Continuous Drain Current Id: 2.1A
• Operating Frequency Range: 2.7GHz To 3.1GHz
• Rf Transistor Case: SOT-608A
• No. Of Pins: 2
• Transistor Type: RF MOSFET
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Limiting values
BLS6G3135-20_6G3135S-20_3
Product data sheet
1.3 Applications
I
Table 2.
[1]
Table 3.
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
BLS6G3135-20 (SOT608A)
1
2
3
BLS6G3135S-20 (SOT608B)
1
2
3
Type number
BLS6G3135-20
BLS6G3135S-20 -
Symbol
V
V
I
T
T
D
stg
j
DS
GS
S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency
range
Connected to flange.
Pinning
Ordering information
Limiting values
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Description
drain
gate
source
drain
gate
source
Package
Name
-
BLS6G3135-20; BLS6G3135S-20
Rev. 03 — 3 March 2009
Description
flanged ceramic package; 2 mounting holes; 2 leads
ceramic earless flanged package; 2 leads
Conditions
[1]
[1]
LDMOS S-Band radar power transistor
Simplified outline
2
1
2
1
3
3
Min
-
-
-
0.5
65
Graphic symbol
© NXP B.V. 2009. All rights reserved.
Max
60
+13
2.1
+150
225
2
2
sym112
sym112
Version
SOT608A
SOT608B
1
3
1
3
Unit
V
V
A
C
C
2 of 12