BLS6G3135-20 NXP Semiconductors, BLS6G3135-20 Datasheet - Page 3

LDMOS,RF,20W,3100M-3500MHZ,32V

BLS6G3135-20

Manufacturer Part Number
BLS6G3135-20
Description
LDMOS,RF,20W,3100M-3500MHZ,32V
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLS6G3135-20

Drain Source Voltage Vds
60V
Continuous Drain Current Id
2.1A
Operating Frequency Range
2.7GHz To 3.1GHz
Rf Transistor Case
SOT-608A
No. Of Pins
2
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Part Number
Manufacturer
Quantity
Price
Part Number:
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Manufacturer:
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Quantity:
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Part Number:
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Manufacturer:
NXP
Quantity:
5 000
NXP Semiconductors
5. Thermal characteristics
6. Characteristics
7. Application information
BLS6G3135-20_6G3135S-20_3
Product data sheet
Table 5.
Table 6.
T
Table 7.
Mode of operation: pulsed RF; t
T
Symbol
R
Symbol Parameter
V
V
I
I
I
g
R
Symbol
P
V
G
t
t
DSS
DSX
GSS
r
f
j
case
fs
D
(BR)DSS
GS(th)
L
CC
th(j-case)
DS(on)
p
= 25 C unless otherwise specified.
= 25 C; unless otherwise specified; in a class-AB production circuit.
drain-source breakdown
voltage
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Thermal characteristics
Characteristics
Application information
Parameter
thermal resistance from junction
to case
Parameter
output power
supply voltage
power gain
drain efficiency
rise time
fall time
BLS6G3135-20; BLS6G3135S-20
Rev. 03 — 3 March 2009
p
= 300 s; = 10 %; RF performance at V
Conditions
V
V
V
V
V
V
V
V
I
D
GS
DS
GS
GS
DS
GS
DS
GS
Conditions
P
P
P
P
P
= 1.4 A
L
L
L
L
L
Conditions
T
= 10 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 8.3 V; V
= V
= 20 W
= 20 W
= 20 W
= 20 W
= 20 W
case
t
t
p
p
GS(th)
GS(th)
= 100 s;
= 300 s;
= 80 C; P
LDMOS S-Band radar power transistor
D
DS
D
D
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 40 mA
= 1.4 A
= 28 V
= 0 V
L
= 20 %
= 10 %
= 20 W
Min
60
1.4
-
6
-
-
-
Min
-
-
12
40
-
-
DS
= 32 V; I
Typ
0.76
0.79
Typ
-
2
-
8.2
-
2.8
0.37
Typ
20
-
15.5
45
20
10
© NXP B.V. 2009. All rights reserved.
Max
0.92
0.95
Dq
Max
-
2.4
1.5
-
150
-
0.58
Max
-
32
-
-
50
50
= 50 mA;
3 of 12
Unit
K/W
K/W
Unit
V
V
A
nA
S
Unit
W
V
dB
%
ns
ns
A

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