DE375-102N12A IXYS RF, DE375-102N12A Datasheet - Page 2

RF MOSFET, N CHANNEL, 1KV, DE-375

DE375-102N12A

Manufacturer Part Number
DE375-102N12A
Description
RF MOSFET, N CHANNEL, 1KV, DE-375
Manufacturer
IXYS RF
Datasheet

Specifications of DE375-102N12A

Drain Source Voltage Vds
1kV
Continuous Drain Current Id
12A
Power Dissipation Pd
940W
Operating Temperature Range
-55°C To +175°C
Rf Transistor Case
DE-375
Transistor Type
RF MOSFET
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DE375-102N12A
Manufacturer:
ST
Quantity:
101
IXYS RF reserves the right to change limits, test conditions and dimensions.
IXYS RF MOSFETS are covered by one or more of the following U.S. patents:
4,835,592
5,034,796
5,381,025
Symbol
R
C
C
C
C
T
T
T
T
Q
Q
Q
Source-Drain Diode
Symbol
I
I
V
T
Q
I
For detailed device mounting and installation instructions, see the “DE-
Series MOSFET Mounting Instructions” technical note on IXYS RF’s web
site at www.ixysrf.com/Technical_Support/App_notes.html
S
SM
RM
d(on)
on
d(off)
off
rr
SD
G
iss
oss
rss
stray
g(on)
gs
gd
RM
4,850,072
5,049,961
5,640,045
Test Conditions
V
f = 1 MHz
Back Metal to any Pin
V
I
R
V
I
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t
I
V
D
D
F
F
GS
GS
GS
GS
R
G
= I
= I
= 0.5 I
= 0.5 I
= 100V
= 0.2
= 0 V, V
= 15 V, V
= 10 V, V
= 0 V
S
S
, V
, -di/dt = 100A/ s,
GS
DM
D25
= 0 V,
(External)
DS
DS
DS
300 s, duty cycle
= 0.8 V
4,881,106
5,063,307
= 0.8 V
= 0.5 V
DSS(max)
DSS
DSS
,
4,891,686
5,187,117
JM
2%
Characteristic Values
(
Characteristic Values
(
T
T
J
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
min.
min.
4,931,844
5,237,481
2000
typ.
typ.
150
200
0.3
0.6
30
33
93
16
42
5
3
5
8
7
5,017,508
5,486,715
max.
max.
1.5
12
72
nC
nC
nC
pF
pF
pF
pF
ns
ns
ns
ns
ns
C
A
A
V
A
RF Power MOSFET
DE375-102N12A

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