DE375-501N21A IXYS Corporation, DE375-501N21A Datasheet
DE375-501N21A
Related parts for DE375-501N21A
DE375-501N21A Summary of contents
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... JM ≤ DSS >200 940 425 4.5 0.16 0.36 Characteristic Values T = 25°C unless otherwise specified J min. typ. max. 500 2.5 ±100 0.22 17 -55 +175 175 -55 +175 300 3 DE375-501N21A RF Power MOSFET V = DSS I = D25 R = DS(on V/ns V/ns W GATE W W C/W SG1 ...
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... J min. typ. max. 0.3 2000 , 200 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max. 21 150 JM 1.5 200 0.6 15 4,891,686 4,931,844 5,017,508 5,187,117 5,237,481 5,486,715 DE375-501N21A RF Power MOSFET Ω µC A ...
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... Vds in Volts 375-501N21A Capacitances vs Vds DE375-501N21A RF Power MOSFET Ciss Coss Crss 350 400 450 500 ...
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... DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS (Preliminary) of the device, Rds is the resistive leakage term. DE375-501N21A RF Power MOSFET are mod- RSS Doc #9200-0250 Rev 4 © 2003 IXYS RF An IXYS Company 2401 Research Blvd ...