DE375-102N10A IXYS Corporation, DE375-102N10A Datasheet
DE375-102N10A
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DE375-102N10A Summary of contents
Page 1
... Maximum Ratings 1000 1000 = 1 MΩ ±20 ±30 JM ≤ DSS >200 940 425 4.5 0.16 0.23 Characteristic Values T = 25°C unless otherwise specified J min. typ. 1000 2 -55 150 -55 300 3 DE375-102N10A RF Power MOSFET V = DSS I = D25 R = DS(on V/ns V/ns W GATE W ...
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... J min. typ. max. 0.3 2900 , 100 Characteristic Values ( T = 25°C unless otherwise specified) J min. typ. max 1.5 200 0.6 7 4,891,686 4,931,844 5,017,508 5,187,117 5,237,481 5,486,715 DE375-102N10A RF Power MOSFET Ω µC A ...
Page 3
... DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS of the device, Rds is the resistive leakage term. DE375-102N10A RF Power MOSFET are mod- RSS Doc #9200-0223 Rev 6 © 2003 IXYS RF ...