MMBZ33VAL NXP Semiconductors, MMBZ33VAL Datasheet - Page 7
MMBZ33VAL
Manufacturer Part Number
MMBZ33VAL
Description
DIODE,DUAL TVS,UNI DIR,40W,26V,SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBZ27VAL235.pdf
(17 pages)
Specifications of MMBZ33VAL
Reverse Stand-off Voltage Vrwm
26V
Breakdown Voltage Range
31.35V To 34.65V
Clamping Voltage Vc Max
46V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
870mA
Diode Case
RoHS Compliant
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NXP Semiconductors
6. Thermal characteristics
MMBZXAL_SER_2
Product data sheet
Table 9.
[1]
[2]
[3]
Symbol
Per device
R
R
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Measured from pin 1 or 2 to pin 3.
Parameter
thermal resistance from junction
to ambient
thermal resistance from junction
to solder point
Thermal characteristics
MMBZxAL series
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Conditions
in free air
MMBZxAL series
[2]
[1]
[2]
[3]
Min
-
-
-
-
-
Typ
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
460
420
340
150
50
2
.
Unit
K/W
K/W
K/W
K/W
K/W
7 of 17
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