MMBZ33VAL NXP Semiconductors, MMBZ33VAL Datasheet - Page 5

• Manufacturer Part Number: MMBZ33VAL
• Description: DIODE,DUAL TVS,UNI DIR,40W,26V,SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ33VAL

• Reverse Stand-off Voltage Vrwm: 26V
• Breakdown Voltage Range: 31.35V To 34.65V
• Clamping Voltage Vc Max: 46V
• Diode Configuration: Common Anode
• Peak Pulse Current Ippm: 870mA
• Diode Case: RoHS Compliant

NXP Semiconductors
MMBZXAL_SER_2
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
Table 7.
T
[1]
[2]
Table 8.
Symbol
T
T
T
Symbol
Per diode
V
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
amb
j
amb
stg
ESD
In accordance with IEC 61643-321 (10/1000 μs current waveform).
Measured from pin 1 or 2 to pin 3.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and
standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 or 2 to pin 3.
= 25
°
C unless otherwise specified.
Limiting values
ESD maximum ratings
ESD standards compliance
Parameter
junction temperature
ambient temperature
storage temperature
Parameter
electrostatic discharge
voltage
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
…continued
Conditions
IEC 61000-4-2
(contact discharge)
machine model
Conditions
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
MMBZxAL series
[1][2]
[2]
Min
-
−55
−65
Min
-
-
© NXP B.V. 2009. All rights reserved.
Max
150
+150
+150
Max
30
2
Unit
°C
°C
°C
Unit
kV
kV
2
.
5 of 17