MMBZ33VAL NXP Semiconductors, MMBZ33VAL Datasheet - Page 15
MMBZ33VAL
Manufacturer Part Number
MMBZ33VAL
Description
DIODE,DUAL TVS,UNI DIR,40W,26V,SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.MMBZ27VAL235.pdf
(17 pages)
Specifications of MMBZ33VAL
Reverse Stand-off Voltage Vrwm
26V
Breakdown Voltage Range
31.35V To 34.65V
Clamping Voltage Vc Max
46V
Diode Configuration
Common Anode
Peak Pulse Current Ippm
870mA
Diode Case
RoHS Compliant
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NXP Semiconductors
13. Revision history
Table 12.
MMBZXAL_SER_2
Product data sheet
Document ID
MMBZXAL_SER_2
Modifications:
MMBZXVAL_SER_1
Revision history
20091210
20080901
Release date
•
•
•
•
•
•
Type numbers MMBZ5V6AL, MMBZ6V2AL, MMBZ6V8AL, MMBZ9V1AL and
MMBZ10VAL added
Type numbers MMBZ12VAL/DG, MMBZ15VAL/DG, MMBZ18VAL/DG, MMBZ20VAL/DG,
MMBZ27VAL/DG, MMBZ33VAL/DG removed
Figure 5
Figure
Figure
Section 14 “Legal
6: added
10: updated
and 7: updated
Data sheet status
Product data sheet
Product data sheet
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
information”: updated
Change notice
-
-
MMBZxAL series
Supersedes
MMBZXVAL_SER_1
-
© NXP B.V. 2009. All rights reserved.
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