STM32F103ZGH6 STMicroelectronics, STM32F103ZGH6 Datasheet - Page 42
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STM32F103ZGH6
Manufacturer Part Number
STM32F103ZGH6
Description
MCU 32BIT 1MB FLASH 144LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F103VGT6.pdf
(120 pages)
Specifications of STM32F103ZGH6
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
72MHz
Connectivity
CAN, I²C, IrDA, LIN, MMC, SPI, UART/USART, USB
Peripherals
DMA, I²S, LCD, POR, PWM, WDT
Number Of I /o
112
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
96K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 21x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Processor Series
STM32F101xG
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
80 KB
Interface Type
I2C, SPI, UART
Maximum Clock Frequency
36 MHz
Number Of Programmable I/os
112
Number Of Timers
15
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Operating Temperature Range
- 40 C to + 105 C
Processor To Be Evaluated
STM32F103ZG
Supply Current (max)
28 mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Other names
497-11115
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F103ZGH6
Manufacturer:
STMicroelectronics
Quantity:
135
Company:
Part Number:
STM32F103ZGH6
Manufacturer:
STMicroelectronics
Quantity:
10 000
Part Number:
STM32F103ZGH6
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
5.3.2
5.3.3
42/120
Operating conditions at power-up / power-down
The parameters given in
temperature condition summarized in
Table 11.
Embedded reset and power control block characteristics
The parameters given in
temperature and V
Table 12.
1. The product behavior is guaranteed by design down to the minimum V
2. Guaranteed by design, not tested in production.
T
Symbol
RSTTEMPO
V
V
V
Symbol
t
PVDhyst
PDRhyst
POR/PDR
VDD
V
PVD
(2)
(2)
(2)
V
V
Operating conditions at power-up / power-down
Embedded reset and power control block characteristics
DD
DD
Programmable voltage
detector level selection
PVD hysteresis
Power on/power down
reset threshold
PDR hysteresis
Reset temporization
rise time rate
fall time rate
Parameter
DD
Parameter
supply voltage conditions summarized in
Table 11
Table 12
Doc ID 16554 Rev 2
are derived from tests performed under the ambient
are derived from tests performed under ambient
PLS[2:0]=000 (rising edge)
PLS[2:0]=000 (falling edge)
PLS[2:0]=001 (rising edge)
PLS[2:0]=001 (falling edge)
PLS[2:0]=010 (rising edge)
PLS[2:0]=010 (falling edge)
PLS[2:0]=011 (rising edge)
PLS[2:0]=011 (falling edge)
PLS[2:0]=100 (rising edge)
PLS[2:0]=100 (falling edge)
PLS[2:0]=101 (rising edge)
PLS[2:0]=101 (falling edge)
PLS[2:0]=110 (rising edge)
PLS[2:0]=110 (falling edge)
PLS[2:0]=111 (rising edge)
PLS[2:0]=111 (falling edge)
Falling edge
Rising edge
Table
Conditions
10.
Conditions
POR/PDR
STM32F103xF, STM32F103xG
Min
20
Table
0
1.8
2.19
2.09
2.28
2.18
2.38
2.28
2.47
2.37
2.57
2.47
2.66
2.76
1.84
2.56
2.66
Min
2.1
value.
2
1
(1)
10.
2.18
2.08
2.28
2.18
2.38
2.28
2.48
2.38
2.58
2.48
2.68
2.58
2.78
2.68
2.88
2.78
100
1.88
1.92
40
2.5
Typ
Max
2.26
2.16
2.37
2.27
2.48
2.38
2.58
2.48
2.69
2.59
2.79
2.69
2.9
2.8
3
2.9
1.96
2.0
4.5
Max
µs/V
Unit
Unit
mV
mV
mS
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V