SST25LF020A-33-4I-SAE SILICON STORAGE TECHNOLOGY, SST25LF020A-33-4I-SAE Datasheet - Page 18

• Manufacturer Part Number: SST25LF020A-33-4I-SAE
• Description: 2M FLASH MEMORY, SPI EEPROM, SOIC8
• Manufacturer: SILICON STORAGE TECHNOLOGY

Specifications of SST25LF020A-33-4I-SAE

• Memory Size: 2Mbit
• Clock Frequency: 33MHz
• Supply Voltage Range: 3V To 3.6V
• Memory Case Style: SOIC
• No. Of Pins: 8
• Svhc: No SVHC (18-Jun-2010)
• Device: RoHS Compliant
• Package / Case: SOIC
• Memory Type: Flash
• Memory Configuration: 256K X 8
• Interface Type: Serial, SPI
• Rohs Compliant: Yes

Data Sheet
ELECTRICAL SPECIFICATIONS
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum Stress
Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Expo-
sure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to V
Package Power Dissipation Capability (Ta = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Surface Mount Solder Reflow Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds
Output Short Circuit Current
O
TABLE 7: DC O
TABLE 8: R
TABLE 9: C
©2006 Silicon Storage Technology, Inc.
Range
Commercial
Industrial
Extended
Symbol
I
I
I
I
I
V
V
V
V
Symbol
T
T
Parameter
C
C
DDR
DDW
SB
LI
LO
PERATING
PU-READ
PU-WRITE
IL
IH
OL
OH
OUT
IN
1. Output shorted for no more than one second. No more than one output shorted at a time.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1
1
1
1
Parameter
Read Current
Program and Erase Current
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
R
ANGE
ECOMMENDED
APACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
PERATING
Parameter
V
V
Description
Output Pin Capacitance
Input Capacitance
:
DD
DD
Ambient Temp
-40°C to +85°C
-20°C to +85°C
Min to Read Operation
Min to Write Operation
0°C to +70°C
1
C
S
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
YSTEM
HARACTERISTICS
P
OWER
3.0-3.6V
3.0-3.6V
3.0-3.6V
-
UP
V
0.7 V
V
DD
Min
DD
V
T
DD
-0.2
IMINGS
DD
= 3.0-3.6V
Limits
Max
0.2
0.8
15
10
30
18
1
1
AC C
Input Rise/Fall Time . . . . . . . . . . . . . . . 5 ns
Output Load . . . . . . . . . . . . . . . . . . . . . C
See Figures 20 and 21
Units
mA
mA
µA
µA
µA
V
V
V
V
ONDITIONS OF
Test Conditions
CE#=V
CE#=V
V
V
V
V
I
I
CE#=0.1 V
OL
OH
IN
OUT
DD
DD
2 Mbit / 4 Mbit SPI Serial Flash
=100 µA, V
=-100 µA, V
=GND to V
SST25LF020A / SST25LF040A
=V
=V
=GND to V
DD
DD
DD
DD
, V
Min
Max
DD
T
Test Condition
IN
EST
/0.9 V
=V
DD
DD
V
Minimum
DD
V
DD
OUT
, V
=V
DD
IN
=V
, V
10
10
DD
DD
DD
= 0V
or V
DD
= 0V
DD
=V
@20 MHz, SO=open
Min
=V
Min
SS
DD
DD
Max
Max
S71242-05-000
L
= 30 pF
Maximum
Units
12 pF
6 pF
µs
µs
DD
DD
T7.0 1242
T8.0 1242
T9.0 1242
+0.5V
+2.0V
1/06